供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2017-02-08
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusPRODUCTION (Last Updated: 5 years ago)
描述
由其分销商提供的 Wolfspeed C3M0075120K 的描述。
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
Wolfspeed
SICFET N-CH 1200V 30A TO247-4L / N-Channel 1200 V 30A (Tc) 113.6W (Tc) Through Hole TO-247-4L
Trans MOSFET N-CH SiC 1.2KV 32A 4-Pin(4+Tab) TO-247 Tube
Discrete SiC MOSFET, 1200 V, 75 mΩ, 30 A, TO-247-4, RoHS
Wolfspeed SCT
MOSFET SIC MOSFET 1200V 75 mOhm
Wolfspeed NMOS, Vds=1200 V, 30 A, TO-247-4, , 4
SICFET N-CH 1200V 30A TO247-4L
Power Field-Effect Transistor, 30A I(D), 1200V, 0.09ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
Sic Mosfet, N-Ch, 1.2Kv, 30.8A, To-247; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:30.8A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:4Pins; Rds(On) Test Voltage:15V; Msl:- Rohs Compliant: Yes |Wolfspeed C3M0075120K
制造商别名
Wolfspeed 在全球拥有多个品牌，分销商可将其用作替代名称。Wolfspeed 也可称为以下名称：
- Wolfspeed Inc
- Cree/Wolfspeed
- Wolfspeed - a Cree company
- Wolfspeed / Cree
- WOLFSPEED INC (CREE)
- WOLFSOn semi
技术规格
Physical
Number of Terminals4
Technical
Continuous Drain Current (ID)30 A
Current Rating30 A
Drain to Source Breakdown Voltage1.2 kV
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vdss)1.2 kV
Gate to Source Voltage (Vgs)19 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature175 °C
Max Power Dissipation113.6 W
Min Breakdown Voltage1.2 kV
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
Power Dissipation136 W
Schedule B8541290080
Turn-Off Delay Time38 ns
Turn-On Delay Time30 ns
Dimensions
Height27.97 mm