WeEn Semiconductors WMSC016H12B1P6T

Name: WeEn Semiconductors WMSC016H12B1P6T
Brand: WeEn Semiconductors
SKU: WMSC016H12B1P6T

Silicon Carbide MOSFET, Half Bridge, N Channel, 85 A, 1.2 kV, 20 Milliohms, Module, 18 Pins

$ 46

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制造商页面数据表

价格与库存

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Distributor		SKU		Min
Newark		WMSC016H12B1P6T	135	1	56.600	52.300	47.740	46.000	46.000
TME	2	WMSC016H12B1P6T	0	1	79.220	63.100	49.090	47.200	47.200	14h
Avnet		WMSC016H12B1P6T	0	120				44.957	44.727	3d
element14 APAC		WMSC016H12B1P6T	130	1	57.398*	41.620*	37.044*	37.044*	37.044*	6h
Farnell		WMSC016H12B1P6T	130	1	46.765*	39.348*	37.128*	37.128*	37.128*	16h

数据表和文档

下载 WeEn Semiconductors WMSC016H12B1P6T 的数据表和制造商文档。

element14 APAC

Datasheet15 页1 年前

TME

库存历史记录

3 个月趋势:

-100%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2024-02-21

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 WeEn Semiconductors WMSC016H12B1P6T 的描述。

Silicon Carbide MOSFET, Half Bridge, N Channel, 85 A, 1.2 kV, 20 Milliohms, Module, 18 Pins

EBV Elektronik

Power Field-Effect Transistor, 85A I(D), 1200V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

SIC MOSFET, N-CH, 1.2KV, 85A, WEENPACKB1;

Farnell

Sic Mosfet, N-Ch, 1.2Kv, 85A, Weenpackb1; Mosfet Module Configuration:Half Bridge; Channel Type:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:18Pins; Rds(On) Test Voltage:18V; Product Range:- |Ween Semiconductors WMSC016H12B1P6T

Newark