Vishay VS-GT250SA60S

Name: Vishay VS-GT250SA60S
Brand: Vishay
SKU: VS-GT250SA60S

Insulated Gate Bipolar Transistor, 359A I(C), 600V V(BR)CES, N-Channel

$ 29.936

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制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
DigiKey	112-VS-GT250SA60S-ND	146	1	Tube	43.320	32.387	32.387	28.125	28.125
Newark	VS-GT250SA60S	0	1		42.500	33.840	33.840	33.840	33.840
Avnet	VS-GT250SA60S	0	160					27.778	26.471	13h
TTI Asia	VS-GT250SA60S	联系方式						24.220	24.220	2h
TTI Europe	VS-GT250SA60S	0	160	Bulk				33.396*	33.396*	14h

数据表和文档

下载 Vishay VS-GT250SA60S 的数据表和制造商文档。

IHS

Datasheet9 页4 年前

Future Electronics

库存历史记录

3 个月趋势:

+97.46%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2021-08-23

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Vishay VS-GT250SA60S 的描述。

Insulated Gate Bipolar Transistor, 359A I(C), 600V V(BR)CES, N-Channel

IHS

Insulated Gate Bipolar Transistor, Ultralow VCE(on), 250 A

Future Electronics

晶体管, IGBT 模块, 600V, 359A, 750W, SOT-227;

element14 APAC

IGBT MOD 600V 380A 893W SOT227

Easev

IGBT, SINGLE, 600V, 359A, SOT-227; Continuous Collector Current:359A; Collector Emitter Saturation Voltage:-; Power Dissipation:750W; Operating Temperature Max:175°C; IGBT Termination:Stud; Collector Emitter Voltage Max:600V RoHS Compliant: Yes

Newark