供应链
Country of OriginPhilippines
Introduction Date1986-06-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
描述
由其分销商提供的 Vishay TCST1103 的描述。
Photointerrupter Transmissive 2.03 mm Phototransistor 4-Pin Slotted Optical Switch
Transistor Output Slotted Switch, 1-Channel, 3.1mm Slot Width
TCST1103 Series 950 nm 3.1 mm Gap 4 mA Transmissive Optical Sensor
VISHAY - TCST1103 - Transmissive Photo Interrupter, Phototransistor, Through Hole, 3.1 mm, 1 mm, 60 mA, 6 V
New optical transmission switches, phototransistor output; VISHAY; TCST1103; 70 V; 70 V; 60 mA; 1.25 V
sENSOR TRANS. NO FLAGS, 1MM APERT-e4
Channel Type Photoelectric Switch (Logic Output)
Opt.Sensor Phototrans. Outp. 950nm TCST1103
Vishay , 1, 3.1mm, , 11.9 x 6.3 x 11.1mm
SENSOR, OPTICAL, PHOTODIODE O/P
SENSOR OPT SLOT PHOTOTRANS MODUL
SENSR OPTO SLOT 3.1MM TRANS THRU
Fork coupler Dimensions L x W x H: 11.9 x 6.3 x 10.8 mm Gap width: 3.1 mm Operating temperature: -55...+85 °C Break-time: 8 µs Make-time: 10 µs Output collector-emitter voltage: 70 V
OPTICAL SENSOR TRANSMISSIVE / SLOTTED INTERRUPTER; Sensor Output Type:Phototransistor; Sensor Mounting:Through Hole; Operating Temperature Min:-55°C; Operating Temperature Max:85°C; Product Range:-; Aperture Width:1mm RoHS Compliant: No
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Contact PlatingSilver, Tin
MountPCB, Through Hole
Number of Pins4
Technical
Ambient Temperature Range High85 °C
Collector Emitter Breakdown Voltage70 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)70 V
Current Transfer Ratio20 %
Dark Current100 nA
Fall Time8 s
Forward Current60 mA
Forward Voltage1.25 V
Input Current60 mA
Max Collector Current4 mA
Max Junction Temperature (Tj)100 °C
Max Operating Temperature85 °C
Max Output Current100 mA
Max Power Dissipation250 mW
Min Operating Temperature-55 °C
Number of Circuits1
Number of Elements1
Output ConfigurationPhototransistor
Output Current4 mA
Output Voltage70 V
Power Dissipation250 mW
Response Time8 µs
Reverse Breakdown Voltage6 V
Reverse Voltage (DC)6 V
Rise Time10 s
Schedule B8541406050
Sensing Distance3.0988 mm
Turn-Off Delay Time8 µs
Turn-On Delay Time10 µs
Voltage Rating (DC)1.25 V
Wavelength950 nm
Dimensions
Height11.1 mm
Length11.9 mm
Width6.3 mm