Technical
Ambient Temperature Range High85 °C
Collector Emitter Breakdown Voltage70 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)70 V
Current Rating60 mA
Dark Current10 nA
Forward Current60 mA
Forward Voltage1.25 V
Input Current60 mA
Max Collector Current1 mA
Max Junction Temperature (Tj)100 °C
Max Operating Temperature85 °C
Max Power Dissipation200 mW
Max Supply Voltage1.5 V
Min Operating Temperature-25 °C
Min Supply Voltage1.25 V
Number of Channels1
Number of Elements1
Output TypePhototransistor
Output Voltage70 V
Power Dissipation200 mW
Reverse Breakdown Voltage5 V
Reverse Voltage (DC)5 V
Schedule B8541406050
Sensing Distance15 mm
TerminationSolder
Voltage Rating (DC)1.25 V
Wavelength950 nm