供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-05-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-05-06
LTD Date2008-11-06
描述
由其分销商提供的 Vishay SUB75P03-07 的描述。
P-CH MOSFET D2PAK (TO-263) 30V 7MOHM @ 10V<AZ
P-Channel MOSFETs 30V 75A 187W
TRANS MOSFET P-CH 30V 75A 3PIN TO-263
Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:75A; On-Resistance, Rds(on):0.01ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-263; Leaded Process Compatible:No RoHS Compliant: No
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-263
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)75 A
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time210 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature175 °C
Max Power Dissipation187 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation187 W
Rise Time225 ns
Turn-Off Delay Time150 ns
Turn-On Delay Time25 ns
Dimensions
Height4.83 mm
Length10.41 mm
Width9.65 mm