供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-09-28
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2007-12-15
LTD Date2008-06-12
描述
由其分销商提供的 Vishay SUB70N03-09P 的描述。
N-Channel MOSFETs 30V 70A 93W
Power Field-Effect Transistor, 70A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
OBSOLETE - USE SUB70N03-09BP-E3
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:70A; On Resistance, Rds(on):0.015ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-263 ;RoHS Compliant: No
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-263-3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)70 A
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature175 °C
Max Power Dissipation93 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation93 W
Rise Time7 ns
Turn-Off Delay Time35 ns
Turn-On Delay Time13 ns
Dimensions
Height4.83 mm
Length10.41 mm
Width9.65 mm