Vishay SISS30DN-T1-GE3

Name: Vishay SISS30DN-T1-GE3
Brand: Vishay
SKU: SISS30DN-T1-GE3

Transistor MOSFET N-CH 80V 54.7A 8-Pin PowerPAK 1212 T/R

$ 0.578

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制造商页面数据表

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Distributor		SKU		Min	Pkg
Newark	2	SISS30DN-T1-GE3	3,988	1	Cut Tape	1.700	1.090	0.733	0.533	0.533
DigiKey	3	742-SISS30DN-T1-GE3CT-ND	12,057	1	Cut Tape	1.880	1.193	0.800	0.578	0.578
TME	2	SISS30DN-T1-GE3	0	1		1.892*	1.293*	0.975*	0.975*	0.975*	11h
TTI		SISS30DN-T1-GE3	0	6K	Tape & Reel					0.474	1d
Avnet		SISS30DN-T1-GE3	0	6K						0.501	2d

数据表和文档

下载 Vishay SISS30DN-T1-GE3 的数据表和制造商文档。

IHS

Datasheet9 页5 年前

Future Electronics

库存历史记录

3 个月趋势:

-1.39%

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Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 Vishay SISS30DN-T1-GE3 的描述。

Transistor MOSFET N-CH 80V 54.7A 8-Pin PowerPAK 1212 T/R

Avnet

4.8W(Ta),57W(Tc) 20V 3.8V@ 250¦ÌA 40nC@ 10 V 1N 80V 8.25m¦¸@ 10A,10V 54.7A 1.666nF@10V PPAK-1212-8

UnikeyIC

Power Field-Effect Transistor, 54.7A I(D), 80V, 0.0103ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET N-CH 80V 15.9A/54.7A PPAK / N-Channel 80 V 15.9A (Ta), 54.7A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S

Win Source

MOSFET N-CH 80V 15.9A/54.7A PPAK

Vigor Components

MOSFET N-CHAN 80-V POWERPAK 1212

Fly-Wing Technology

Mosfet, N-Ch, 80V, 54.7A, 150Deg C, 57W; Transistor Polarity:N Channel; Continuous Drain Current Id:54.7A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.00685Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.8V; Rohs Compliant: Yes |Vishay SISS30DN-T1-GE3

Newark