Vishay SISS26DN-T1-GE3

Name: Vishay SISS26DN-T1-GE3
Brand: Vishay
SKU: SISS26DN-T1-GE3

MOSFET N-CH 60V 60A PPAK1212-8S / N-Channel 60 V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S

$ 0.89

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet		SISS26DN-T1-GE3	3,000	3K						0.761	2d
Newark	2	SISS26DN-T1-GE3	3,101	1	Cut Tape	2.660	1.730	1.180	0.900	0.900
DigiKey	3	SISS26DN-T1-GE3CT-ND	5,199	1	Cut Tape	2.690	1.729	1.183	0.879	0.879
TTI		SISS26DN-T1-GE3	15,000	3K	Tape & Reel					0.680	1d
TME	2	SISS26DN-T1-GE3	0	1		2.190	1.520	1.410	1.410	1.410	20h

数据表和文档

下载 Vishay SISS26DN-T1-GE3 的数据表和制造商文档。

Upverter

Datasheet9 页5 年前

Technical Drawing1 页14 年前

IHS

element14 APAC

库存历史记录

3 个月趋势:

-32.54%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2017-05-23

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Vishay SISS26DN-T1-GE3 的描述。

MOSFET N-CH 60V 60A PPAK1212-8S / N-Channel 60 V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S

Win Source

Trans MOSFET N-CH 60V 60A 8-Pin PowerPAK 1212-S T/R

Verical

N-Channel 60-V (D-S) Mosfet |Vishay SISS26DN-T1-GE3

Newark

57W 20V 3.6V 37nC 1N 60V 4.5m¦¸ 60A 1.71nF SOIC-8

UnikeyIC

Power Field-Effect Transistor, 60A I(D), 60V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET N-CHANNEL 60V 60A 1212-8S

YIC International

60V 60A N-ch 0.0045 Ohm PowerPAK 1212-8S

Future Electronics

MOSFET, N-CH, 60V, 60A, POWERPAK 1212; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.

Farnell