Vishay SISH402DN-T1-GE3

Name: Vishay SISH402DN-T1-GE3
Brand: Vishay
SKU: SISH402DN-T1-GE3

N-Channel 30 V 0.006 Ohm 12 nC TrenchFET® Power Mosfet-PowerPAK 1212-8SH

$ 0.462

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价格与库存

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Distributor		SKU		Min	Pkg
Avnet		SISH402DN-T1-GE3	6,000	3K						0.361	2d
DigiKey	3	SISH402DN-T1-GE3CT-ND	5,483	1	Cut Tape	1.570	0.989	0.657	0.469	0.469
TME	2	SISH402DN-T1-GE3	0	1		1.390	0.888	0.604	0.574	0.574	19h
TTI		SISH402DN-T1-GE3	0	6K	Tape & Reel					0.356	1d
Newark	2	SISH402DN-T1-GE3	0	1	Cut Tape	1.480	0.941	0.631	0.455	0.455

数据表和文档

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IHS

Datasheet9 页2 年前

Future Electronics

库存历史记录

3 个月趋势:

-22.45%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2018-01-02

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Vishay SISH402DN-T1-GE3 的描述。

N-Channel 30 V 0.006 Ohm 12 nC TrenchFET® Power Mosfet-PowerPAK 1212-8SH

Future Electronics

Transistor MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212

Avnet Japan

N-CHANNEL 30 V (D-S) MOSFET Power Field-Effect Transistor, 35A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

Mosfet, N-Ch, 30V, 35A, 150Deg C, 52W; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0048Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Rohs Compliant: Yes |Vishay SISH402DN-T1-GE3

Newark