Vishay SISA96DN-T1-GE3

Single N-Channel 30 V 8.8 mOhm SMT TrenchFET® Power Mosfet - PowerPAK 1212-8
$ 0.23
Production
制造商页面数据表

价格与库存

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DistributorSKUMinPkg
Newark
2
SISA96DN-T1-GE36,6635Cut Tape
Future ElectronicsSISA96DN-T1-GE36,0003KTape & Reel
VericalSISA96DN-T1-GE33,0003K
Arrow ElectronicsSISA96DN-T1-GE33,0003K
DigiKey
3
SISA96DN-T1-GE3CT-ND14,4051Cut Tape

数据表和文档

下载 Vishay SISA96DN-T1-GE3 的数据表和制造商文档。

Farnell

Datasheet9 页5 年前

Upverter

Newark

Future Electronics

库存历史记录

3 个月趋势:
-5.29%
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供应链

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Vishay SISA96DN-T1-GE3 的描述。

Single N-Channel 30 V 8.8 mOhm SMT TrenchFET® Power Mosfet - PowerPAK 1212-8
Future Electronics
Trans MOSFET N-CH 30V 16A 8-Pin PowerPAK 1212 EP T/R
Verical
MOSFET N-CH 30V 16A PPAK1212-8 / N-Channel 30 V 16A (Tc) 26.5W (Tc) Surface Mount PowerPAK® 1212-8
Win Source
N-Channel 30-V (D-S) Mosfet |Vishay SISA96DN-T1-GE3
Newark
Power Field-Effect Transistor, 16A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Semicontronic
MOSFET N-CH 30V 16A POWERPAK1212
Fly-Wing Technology
MOSFET, N-CH, 30V, 16A, POWERPAK 1212; Transistor Polarity: N Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0073ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.2V; Power Dissipation Pd: 26.5W; Transistor Case Style: PowerPAK 1212; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017)
Farnell

图片

Vishay
element14 APAC
Farnell

制造商别名

Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：

  • VIS
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