Vishay SIS443DN-T1-GE3

Name: Vishay SIS443DN-T1-GE3
Brand: Vishay
SKU: SIS443DN-T1-GE3

Power MOSFET, P Channel, 40 V, 35 A, 0.0097 ohm, PowerPAK 1212, Surface Mount

$ 0.725

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet		SIS443DN-T1-GE3	12,000	3K						0.609	2d
DigiKey	3	SIS443DN-T1-GE3CT-ND	1,873	1	Cut Tape	2.290	1.462	0.991	0.725	0.725
CoreStaff		ST74940067	0	1		1.806	1.730	1.169	1.113	1.113	12h
TME	2	SIS443DN-T1-GE3	0	1		2.422*	1.681*	1.070*	0.835*	0.835*	8h
TTI		SIS443DN-T1-GE3	0	3K	Tape & Reel					0.657	22h

数据表和文档

下载 Vishay SIS443DN-T1-GE3 的数据表和制造商文档。

Upverter

Datasheet13 页7 年前

Newark

Farnell

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

+143%

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供应链

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Vishay SIS443DN-T1-GE3 的描述。

Power MOSFET, P Channel, 40 V, 35 A, 0.0097 ohm, PowerPAK 1212, Surface Mount

EBV Elektronik

Trans MOSFET P-CH 40V 13.3A 8-Pin PowerPAK 1212 T/R

Avnet Japan

MOSFET -40V .0117OHM@10V 35A P-CH G-III

Future Electronics

Small Signal Field-Effect Transistor, 0.035A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Semicontronic

场效应管, MOSFET, P沟道, -40V, -35A, 150度 C, 52W;

element14 APAC

MOSFET P-CH 40V 35A PPAK 1212-8

DigiKey

N-Ch PowerPAK1212 BWL 80V 19.5mohm@10V

RS APAC

MOSFET, P-CH, 40V, 35A, PPAK1212-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.0097ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited

Farnell