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VishaySIS478DN-T1-GE3
N-Channel 30 V 0.02 Ohm 3.6 nC SMT TrenchFET® Power Mosfet - PowerPAK 1212-8
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MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.022Ohm;ID 8.5A;SO-8;PD 2.5W;VGS +/-20V;VF
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MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 13.6A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7821TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 13.6A;SO-8;PD 2.5W;VGS +/-20V
描述
由其分销商提供的 Vishay SIS412DN-T1-GE3 的描述。
SiS412DN Series N-Channel 30 V 24 mOhms SMT Power Mosfet - PowerPAK-1212-8
N-CHANNEL 30-V (D-S) MOSFET Power Field-Effect Transistor, 8.7A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Power Dissipation:15.6W; No. Of Pins:8Pins Rohs Compliant: No |Vishay SIS412DN-T1-GE3.
MOSFET, N-CH, 30V, 12A, POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:15.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:15.6W; Voltage Vgs Max:20V
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)8.7 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance24 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance435 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation15.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels1
Number of Elements1
Power Dissipation3.2 W
Rds On Max24 mΩ
Resistance24 MΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time15 ns
Turn-On Delay Time5 ns
Dimensions
Height1.17 mm
Length3.05 mm
Width3.05 mm