Vishay SIS407DN-T1-GE3

Name: Vishay SIS407DN-T1-GE3
Brand: Vishay
SKU: SIS407DN-T1-GE3

Mosfet P-ch 20V 25A 1212-8 Ppak / Trans Mosfet P-ch 20V 25A 8-PIN Powerpak 1212 T/r

$ 0.541

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Newark	2	SIS407DN-T1-GE3	2,900	1	Cut Tape	1.390	1.390	0.781	0.721	0.721
Arrow Electronics		SIS407DN-T1-GE3	6,000	3K						0.368
Verical		SIS407DN-T1-GE3	6,000	3K						0.368
DigiKey	3	SIS407DN-T1-GE3CT-ND	31,483	1	Cut Tape	1.640	1.035	0.689	0.493	0.493
TTI		SIS407DN-T1-GE3	6,000	3K	Tape & Reel					0.377	4h

数据表和文档

下载 Vishay SIS407DN-T1-GE3 的数据表和制造商文档。

Newark

Datasheet13 页6 年前

Datasheet13 页10 年前

Datasheet13 页11 年前

element14 APAC

Farnell

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

+2.19%

CAD 模型

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供应链

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Vishay SIS407DN-T1-GE3 的描述。

MOSFET P-CH 20V 25A 1212-8 PPAK / Trans MOSFET P-CH 20V 25A 8-Pin PowerPAK 1212 T/R

Win Source

Power MOSFET, P Channel, 20 V, 25 A, 0.0082 ohm, PowerPAK 1212, Surface Mount

Avnet

Single P-Channel 20 V 0.0095 O 38 nC Power Mosfet - PowerPAK-1212-8

Future Electronics

3.6W(Ta),33W(Tc) 8V 1V@ 250¦ÌA 93.8nC@ 8 V 1P 20V 9.5m¦¸@ 15.3A,4.5V 25A 2.76nF@10V PAKSO-8,PPAK-1212-8 3.05mm*3.05mm*1.07mm

UnikeyIC

Mosfet, P-Ch, -20V, -25A, Powerpak-8, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:25A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:33W; Msl:- Rohs Compliant: Yes |Vishay SIS407DN-T1-GE3.

Newark

MOSFET,P CH,DIODE,20V,25A,PPAK1212-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-25A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):8200µohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-15.4A; Power Dissipation Pd:3.6W; Voltage Vgs Max:-8V

element14 APAC