Vishay SIS110DN-T1-GE3

Name: Vishay SIS110DN-T1-GE3
Brand: Vishay
SKU: SIS110DN-T1-GE3

Single N-Channel 100 V 54 mOhm SMT TrenchFET® Power Mosfet - PowerPAK 1212-8

$ 0.336

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet		SIS110DN-T1-GE3	6,000	3K						0.264	2d
Newark	2	SIS110DN-T1-GE3	25,756	1	Cut Tape	1.050	0.659	0.435	0.307	0.307
Arrow Electronics	2	SIS110DN-T1-GE3	535	1		0.858	0.583	0.399	0.326	0.326
Verical	2	SIS110DN-T1-GE3	3,000	3K						0.244
DigiKey	3	SIS110DN-T1-GE3CT-ND	16,821	1	Cut Tape	1.250	0.784	0.515	0.362	0.362

数据表和文档

下载 Vishay SIS110DN-T1-GE3 的数据表和制造商文档。

IHS

Datasheet9 页5 年前

Future Electronics

库存历史记录

3 个月趋势:

-4.46%

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Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Vishay SIS110DN-T1-GE3 的描述。

Single N-Channel 100 V 54 mOhm SMT TrenchFET® Power Mosfet - PowerPAK 1212-8

Future Electronics

Trans MOSFET N-CH 100V 14.2A 8-Pin PowerPAK 1212 EP T/R

Verical

Vishay Siliconix NMOS TrenchFET, Vds=100 V, 14.2 A, PowerPAK 1212-8, , 8

UnikeyIC

Power Field-Effect Transistor, 14.2A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET N-CH 100V 5.2A/14.2A PPAK

Vigor Components

MOSFET N-CHAN 100V POWERPAK 1212

YIC International

Mosfet, N-Ch, 100V, 14.2A, 150Deg C, 24W; Transistor Polarity:N Channel; Continuous Drain Current Id:14.2A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.045Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Vishay SIS110DN-T1-GE3

Newark