由其分销商提供的 Vishay SIRA84BDP-T1-GE3 的描述。
MOSFET, N-CH, 30V, 70A, POWERPAK SO ROHS COMPLIANT: YES
Trans MOSFET N-CH 30V 22A 8-Pin PowerPAK SO EP
MOSFET N-CH 30V 22A/70A PPAK SO8 / N-Channel 30 V 22A (Ta), 70A (Tc) 3.7W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8
Power Field-Effect Transistor, 70A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Vishay NMOS, Vds=30 V, 70 A, PowerPAK SO-8, , 8
MOSFET N-CH 30V 22A/70A PPAK SO8
MOSFET, N-CH, 30V, 70A, 150DEG C, 36W; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 70 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 5.2 / Gate-Source Voltage V = 20 / Fall Time ns = 15 / Rise Time ns = 70 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PowerPAK SO-8 / Pins = 8 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 36