Vishay SIRA52ADP-T1-RE3

Name: Vishay SIRA52ADP-T1-RE3
Brand: Vishay
SKU: SIRA52ADP-T1-RE3

N-Channel 40-V (D-S) MOSFET PowerPAK SO-8 650M SG 2 mil , 1.63 mO @ 10V mO @ 7.

$ 0.89

Production

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Verical		SIRA52ADP-T1-RE3	2,944	55				1.000	1.000	1.000
TME	2	SIRA52ADP-T1-RE3	2,944	1		1.733*	1.373*	1.105*	1.105*	1.105*	17h
DigiKey	3	SIRA52ADP-T1-RE3CT-ND	20,506	1	Cut Tape	2.120	1.352	0.913	0.664	0.664
TTI	2	SIRA52ADP-T1-RE3.	0	25	Cut Tape			0.829	0.829	0.829	6h
Newark	2	SIRA52ADP-T1-RE3	0	1	Cut Tape	2.250	1.540	1.270	1.270	1.270

数据表和文档

下载 Vishay SIRA52ADP-T1-RE3 的数据表和制造商文档。

IHS

Datasheet13 页7 年前

Future Electronics

库存历史记录

3 个月趋势:

+190%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2018-05-05

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Vishay SIRA52ADP-T1-RE3 的描述。

N-Channel 40-V (D-S) MOSFET PowerPAK SO-8 650M SG 2 mil , 1.63 mO @ 10V mO @ 7.

Future Electronics

Power MOSFET, N Channel, 40 V, 131 A, 0.0013 ohm, PowerPAK SO, Surface Mount

Avnet

Trans MOSFET N-CH 40V 41.6A 8-Pin PowerPAK SO EP T/R

Verical

4.8W(Ta),48W(Tc) 20V,16V 2.4V@ 250¦ÌA 100nC@ 10 V 1N 40V 1.63m¦¸@ 15A,10V 41.6A,131A 5.5nF@20V

UnikeyIC

MOSFET N-CH 40V 41.6A/131A PPAK / N-Channel 40 V 41.6A (Ta), 131A (Tc) 4.8W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8

Win Source

Power Field-Effect Transistor, 131A I(D), 40V, 0.00163ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET N-CH 40V 41.6A/131A PPAK

Vigor Components

Mosfet, N-Ch, 131A, 40V, Powerpak So; Transistor Polarity:N Channel; Continuous Drain Current Id:131A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0013Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power Rohs Compliant: Yes |Vishay SIRA52ADP-T1-RE3

Newark