Vishay SIRA14BDP-T1-GE3

Name: Vishay SIRA14BDP-T1-GE3
Brand: Vishay
SKU: SIRA14BDP-T1-GE3

Single N-Channel 30 V 5.38 mOhm SMT TrenchFET® Power Mosfet - PowerPAK SO-8

$ 0.227

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
DigiKey	3	SIRA14BDP-T1-GE3CT-ND	1,745	1	Cut Tape	0.830	0.513	0.331	0.227	0.227
Newark		SIRA14BDP-T1-GE3	1,517	1	Cut Tape	0.793	0.493	0.318	0.218	0.218
Verical		SIRA14BDP-T1-GE3	189	39				0.310	0.310	0.310
Arrow Electronics		SIRA14BDP-T1-GE3	189	1		0.310	0.264	0.218	0.218	0.218
Rutronik		STDMOS1242	3,000	3K						0.294	20h

数据表和文档

下载 Vishay SIRA14BDP-T1-GE3 的数据表和制造商文档。

IHS

Datasheet9 页5 年前

Future Electronics

库存历史记录

3 个月趋势:

-16.55%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2018-10-02

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Vishay SIRA14BDP-T1-GE3 的描述。

Single N-Channel 30 V 5.38 mOhm SMT TrenchFET® Power Mosfet - PowerPAK SO-8

Future Electronics

Transistor MOSFET N-CH 30V 64A 8-Pin PowerPAK SO T/R

Avnet Japan

Power Field-Effect Transistor, 64A I(D), 30V, 0.00538ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

Vishay SIRA14BDP-T1-GE3 MOSFET

RS APAC

MOSFET N-CH 30V 21A/64A PPAK SO8

Vigor Components

MOSFET N-CHAN 30-V POWERPAK SO-8

Jak Electronics

N-CH 30V 21A 5,4mOhm PPAK SO-8

Rutronik

MOSFET, N-CH, 64A, 30V, POWERPAK SO; Transistor Polarity: N Channel; Continuous Drain Current Id: 64A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.2V; Power Dissipation Pd: 36W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Gen IV Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Farnell