Vishay SIRA10BDP-T1-GE3

Name: Vishay SIRA10BDP-T1-GE3
Brand: Vishay
SKU: SIRA10BDP-T1-GE3

N-Channel 30 V 0.0036 Ohm 11.7 nC TrenchFET® Gen IV Mosfet PowerPAK-SO-8

$ 0.394

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价格与库存

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Distributor		SKU		Min	Pkg
Avnet		SIRA10BDP-T1-GE3	6,000	3K						0.262	1d
Verical		SIRA10BDP-T1-GE3	3,000	22				0.257	0.257	0.235
Arrow Electronics		SIRA10BDP-T1-GE3	3,000	1		0.262	0.257	0.257	0.257	0.235
TME	2	SIRA10BDP-T1-GE3	0	1		1.210	0.753	0.655	0.655	0.655	3h
TTI		SIRA10BDP-T1-GE3	0	6K	Tape & Reel					0.267	7h

数据表和文档

下载 Vishay SIRA10BDP-T1-GE3 的数据表和制造商文档。

IHS

Datasheet13 页7 年前

Future Electronics

库存历史记录

3 个月趋势:

-29.28%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2018-03-26

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Vishay SIRA10BDP-T1-GE3 的描述。

N-Channel 30 V 0.0036 Ohm 11.7 nC TrenchFET® Gen IV Mosfet PowerPAK-SO-8

Future Electronics

Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R

Verical

Power Field-Effect Transistor, 60A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

5W(Ta),43W(Tc) 20V,16V 2.4V@ 250¦ÌA 36.2nC@ 10 V 1N 30V 3.6m¦¸@ 10A,10V 30A,60A 1.71nF@15V PPAKSO-8 5mm

UnikeyIC

MOSFET N-CH 30V 30A/60A PPAK SO8

Vigor Components

MOSFET, N-CH, 30V, 60A, 150DEG C, 43W; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0023ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.4V; Power Dissipation Pd: 43W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Gen IV Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

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