Vishay SIR882DP-T1-GE3

SiR882DP Series 100 V 8.7 mOhm SMT N-Channel Mosfet - PowerPAK® SO-8
$ 1.24
NRND
制造商页面数据表

价格与库存

查看所有价格优惠
DistributorSKUMinPkg
Arrow ElectronicsSIR882DP-T1-GE33,0003K
VericalSIR882DP-T1-GE33,0003K
DigiKey
3
SIR882DP-T1-GE3CT-ND12,8101Cut Tape
TTISIR882DP-T1-GE36,0003KTape & Reel
22h
TME
2
SIR882DP-T1-GE303K
8h

数据表和文档

下载 Vishay SIR882DP-T1-GE3 的数据表和制造商文档。

Farnell

Datasheet13 页11 年前
Datasheet13 页11 年前

element14 APAC

Newark

库存历史记录

3 个月趋势:
+60.26%
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供应链

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-04-07
Lifecycle StatusNRND (Last Updated: 4 months ago)

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描述

由其分销商提供的 Vishay SIR882DP-T1-GE3 的描述。

SiR882DP Series 100 V 8.7 mOhm SMT N-Channel Mosfet - PowerPAK® SO-8
Future Electronics
Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R
Avnet
MOSFET N-CH 100V 60A PPAK SO-8
DigiKey
Power Field-Effect Transistor, 60A I(D), 100V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
5.4W(Ta),83W(Tc) 20V 2.8V@ 250¦ÌA 58nC@ 10 V 1N 100V 8.7m¦¸@ 20A,10V 60A 1.93nF@50V 4.9mm*5.89mm*1.07mm
UnikeyIC
MOSFET,N CH,DIODE,100V,60A,PPAKSO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7100µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:17.6A; Power Dissipation Pd:5.4W; Voltage Vgs Max:20V
element14 APAC

图片

Farnell
element14 APAC
Newark
Future Electronics

制造商别名

Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：

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