Vishay SIR846ADP-T1-GE3

SiR846ADP Series 100 V 60 A 9.5 mOhm N-Channel MOSFET - PowerPAK® - SOIC-8
$ 1.12
NRND
制造商页面数据表

价格与库存

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DistributorSKUMinPkg
Newark
2
SIR846ADP-T1-GE33,1471Cut Tape
Arrow ElectronicsSIR846ADP-T1-GE33,0003K
VericalSIR846ADP-T1-GE33,0003K
DigiKey
2
SIR846ADP-T1-GE3CT-ND1,0711Cut Tape
TME
2
SIR846ADP-T1-GE303K
1h

数据表和文档

下载 Vishay SIR846ADP-T1-GE3 的数据表和制造商文档。

官方数据表14 年前

库存历史记录

3 个月趋势:
-7.98%
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供应链

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-04-22
Lifecycle StatusNRND (Last Updated: 4 months ago)

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描述

由其分销商提供的 Vishay SIR846ADP-T1-GE3 的描述。

SiR846ADP Series 100 V 60 A 9.5 mOhm N-Channel MOSFET - PowerPAK® - SOIC-8
Future Electronics
Trans MOSFET N-CH 100V 60A 8-Pin PowerPAK SO EP T/R
Verical
MOSFET 100V 7.8mOhm@10V 60A N-Ch MV T-FET
Fly-Wing Technology
Power Field-Effect Transistor, 58.6A I(D), 100V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
5.4W(Ta),83W(Tc) 20V 3V@ 250¦ÌA 66nC@ 10 V 1N 100V 7.8m¦¸@ 20A,10V 60A 2.35nF@50V 4.9mm*5.89mm*1.07mm
UnikeyIC
MOSFET N-CH 100V 60A PPAK SO-8
DigiKey
MOSFET, N-CH, 100V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Farnell

图片

Vishay
Farnell
element14 APAC
Newark
Future Electronics
RS

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