Name: Vishay SIHW21N80AE-GE3
Brand: Vishay
SKU: SIHW21N80AE-GE3

E TO-247-3 Through Hole N-Channel Mosfet Transistor 17.4A Tc 32W Tc 800V -55C~150C TJ

AAA CHIPS

E-Series Power Mosfet, Single - N-Channel, 800V, 17.4A, TO-247AD

Distrelec

Trans MOSFET N-CH 800V 17.4A 3-Pin(3+Tab) TO-247AD

Verical

Power Field-Effect Transistor, 17.4A I(D), 800V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

IHS

Vishay NMOS, Vds=800 V, 17.4 A, TO-247AD, , 3

UnikeyIC

MOSFET N-CH 800V 17.4A TO247AD

DigiKey

VISHAY SEMICONDUCTOR SIHW21N80AE-GE3

Rapid Electronics

Mosfet, N-Ch, 800V, 17.4A, 150Deg C, 32W; Transistor Polarity:N Channel; Continuous Drain Current Id:17.4A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.205Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Vishay SIHW21N80AE-GE3

Newark

Distributor		SKU		Min	Pkg
Onlinecomponents.com		SIHW21N80AE-GE3	292	20	Bulk			3.890	3.580	3.440
TME	2	SIHW21N80AE-GE3	0	480					4.148*	4.148*	11h
TTI		SIHW21N80AE-GE3	0	480	Tube				2.450	2.450	1d
Newark		SIHW21N80AE-GE3	0	1		5.120	3.660	2.460	2.460	2.460
Avnet		SIHW21N80AE-GE3	0	480					2.322	2.148	2d

Vishay SIHW21N80AE-GE3

价格与库存

数据表和文档

JRH Electronics

Future Electronics

库存历史记录

供应链

描述

图片

制造商别名

技术规格

数据表和文档

JRH Electronics

Future Electronics

合规