Vishay SIHW21N80AE-GE3

E TO-247-3 Through Hole N-Channel Mosfet Transistor 17.4A Tc 32W Tc 800V -55C~150C TJ
$ 2.441
Production

价格与库存

数据表和文档

下载 Vishay SIHW21N80AE-GE3 的数据表和制造商文档。

JRH Electronics

Datasheet8 页5 年前

Future Electronics

库存历史记录

3 个月趋势:
+0.00%

供应链

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2019-05-16
Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Vishay SIHW21N80AE-GE3 的描述。

E TO-247-3 Through Hole N-Channel Mosfet Transistor 17.4A Tc 32W Tc 800V -55C~150C TJ
E-Series Power Mosfet, Single - N-Channel, 800V, 17.4A, TO-247AD
Trans MOSFET N-CH 800V 17.4A 3-Pin(3+Tab) TO-247AD
Power Field-Effect Transistor, 17.4A I(D), 800V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Vishay NMOS, Vds=800 V, 17.4 A, TO-247AD, , 3
MOSFET N-CH 800V 17.4A TO247AD
VISHAY SEMICONDUCTOR SIHW21N80AE-GE3
Mosfet, N-Ch, 800V, 17.4A, 150Deg C, 32W; Transistor Polarity:N Channel; Continuous Drain Current Id:17.4A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.205Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Vishay SIHW21N80AE-GE3

制造商别名

Vishay 在全球拥有多个品牌,分销商可将其用作替代名称。Vishay 也可称为以下名称:

  • VIS
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