Vishay SIHG21N80AE-GE3

Name: Vishay SIHG21N80AE-GE3
Brand: Vishay
SKU: SIHG21N80AE-GE3

E-Series Power Mosfet, Single - N-Channel, 800V, 17.4A, TO-247AC

$ 2.45

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Onlinecomponents.com		SIHG21N80AE-GE3	456	20	Bulk			3.890	3.580	3.440
DigiKey		SIHG21N80AE-GE3-ND	460	1	Tube	6.030	6.030	2.888	2.248	2.148
TTI		SIHG21N80AE-GE3	500	50	Tube			2.470	2.400	2.360	1d
TME	2	SIHG21N80AE-GE3	0	1		5.490	4.850	3.530	3.530	3.530	19h
Avnet		SIHG21N80AE-GE3	0	500					2.322	2.148	2d

数据表和文档

下载 Vishay SIHG21N80AE-GE3 的数据表和制造商文档。

JRH Electronics

Datasheet10 页5 年前

Future Electronics

库存历史记录

3 个月趋势:

+0.00%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2019-05-16

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Vishay SIHG21N80AE-GE3 的描述。

E-Series Power Mosfet, Single - N-Channel, 800V, 17.4A, TO-247AC

Distrelec

N-Channel 800 V 17.4A (Tc) 32W (Tc) Through Hole TO-247AC

JRH Electronics

Power Field-Effect Transistor, 17.4A I(D), 800V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

IHS

Vishay NMOS, Vds=800 V, 17.4 A, TO-247AC, , 3

UnikeyIC

MOSFET N-CH 800V 17.4A TO247AC

Vigor Components

VISHAY SEMICONDUCTOR SIHG21N80AE-GE3

Rapid Electronics

Mosfet, N-Ch, 800V, 17.4A, 150Deg C, 32W; Transistor Polarity:N Channel; Continuous Drain Current Id:17.4A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.205Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Vishay SIHG21N80AE-GE3

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