价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | SIHF28N60EF-GE3 | 0 | 1 | 8h | ||||||||
| Future Electronics | SIHF28N60EF-GE3 | 0 | 50 | Tube | ||||||||
| Avnet | SIHF28N60EF-GE3 | 0 | 1K | 4d | ||||||||
| TTI Asia | SIHF28N60EF-GE3 | 联系方式 | 1d | |||||||||
| TTI Europe | SIHF28N60EF-GE3 | 0 | 3K | Tape & Reel | 22h |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-11-19
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
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描述
由其分销商提供的 Vishay SIHF28N60EF-GE3 的描述。
39W(Tc) 30V 4V@ 250¦ÌA 120nC@ 10 V 1N 600V 123m¦¸@ 14A,10V 28A 2.714nF@100V TO-220 16.12mm
Power Field-Effect Transistor, 28A I(D), 600V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET 600V 123mOhms@10V 28A N-Ch MOSFET
600V, 28A, 0.123OHM, TO-200FP EF SERIES
MOSFET N-CH 600V 28A FULLPAK220
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance123 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time39 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.714 nF
Max Operating Temperature150 °C
Max Power Dissipation39 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max123 mΩ
Resistance123 mΩ
Rise Time40 ns
Turn-Off Delay Time82 ns
Turn-On Delay Time24 ns