Vishay SIHB35N60EF-GE3

Trans MOSFET N-CH 600V 32A 3-Pin(2+Tab) D2PAK
$ 2.95
Production
制造商页面数据表

价格与库存

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DistributorSKUMinPkg
Future ElectronicsSIHB35N60EF-GE31,0001KTube
Verical
2
SIHB35N60EF-GE31,0002
Arrow ElectronicsSIHB35N60EF-GE31,0001
TME
2
SIHB35N60EF-GE301
21h
TTISIHB35N60EF-GE301KTape & Reel
10h

数据表和文档

下载 Vishay SIHB35N60EF-GE3 的数据表和制造商文档。

IHS

Datasheet10 页6 年前

Future Electronics

库存历史记录

3 个月趋势:
-1.09%
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供应链

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Vishay SIHB35N60EF-GE3 的描述。

Trans MOSFET N-CH 600V 32A 3-Pin(2+Tab) D2PAK
Verical
MOSFETs 600V Vds 30V Vgs D2PAK (TO-263)
Future Electronics
Power Field-Effect Transistor, 32A I(D), 600V, 0.097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IHS
Mosfet, N-Ch, 32A, 600V, To-263; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.084Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes |Vishay SIHB35N60EF-GE3
Newark

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Vishay
element14 APAC
TME

制造商别名

Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：

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