供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-06-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
描述
由其分销商提供的 Vishay SI9926ADY 的描述。
Power Field-Effect Transistor, 4.8A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Trench Mosfet FET
Dual N-Channel 2.5-V (G-S) MOSFET
Non-Preferred - Offer Si9926BDY-T1-E3
MOSFETs NCH DUAL MOSFET
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageSO
Number of Terminals8
Weight84.99187 mg
Technical
Continuous Drain Current (ID)4.8 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time40 ns
Gate to Source Voltage (Vgs)12 V
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation1.25 W
Rise Time40 ns
Turn-Off Delay Time50 ns
Turn-On Delay Time22 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm