供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1993-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2004-07-31
描述
由其分销商提供的 Vishay SI9410DY 的描述。
Power Field-Effect Transistor, 7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
7 mA 30 V N-CHANNEL Si SMALL SIGNAL MOSFET MS-012AA
N-CH MOSFET SO-8 30V 30MOHM @ 10V
OBSOLETE - Use Si9410BDY-T1-E3
MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: -; Power Dissipation Pd: 2.5
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)7 A
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rise Time10 ns
Turn-Off Delay Time46 ns
Turn-On Delay Time14 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm