Vishay SI7625DN-T1-GE3

Name: Vishay SI7625DN-T1-GE3
Brand: Vishay
SKU: SI7625DN-T1-GE3

P-Channel 30 V 7 mO 5126 nC Surface Mount Power Mosfet - PowerPAK-1212-8

$ 0.541

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Distributor		SKU		Min	Pkg
Newark	2	SI7625DN-T1-GE3	3,000	1	Cut Tape	1.820	1.820	0.932	0.772	0.772
Future Electronics		SI7625DN-T1-GE3	12,000	3K	Tape & Reel					0.620
Arrow Electronics	2	SI7625DN-T1-GE3	1,800	1		1.493	1.019	0.706	0.442	0.442
Verical	2	SI7625DN-T1-GE3	1,800	14				0.706	0.442	0.442
DigiKey	3	SI7625DN-T1-GE3CT-ND	38,986	1	Cut Tape	1.770	1.124	0.752	0.541	0.541

数据表和文档

下载 Vishay SI7625DN-T1-GE3 的数据表和制造商文档。

Upverter

Datasheet13 页2 年前

Technical Drawing1 页18 年前

Newark

Farnell

_legacy Avnet

库存历史记录

3 个月趋势:

+181%

CAD 模型

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供应链

Lifecycle StatusProduction (Last Updated: 3 months ago)

描述

由其分销商提供的 Vishay SI7625DN-T1-GE3 的描述。

P-Channel 30 V 7 mO 5126 nC Surface Mount Power Mosfet - PowerPAK-1212-8

Future Electronics

Trans MOSFET P-CH 30V 17.3A 8-Pin PowerPAK 1212 EP T/R

UnikeyIC

Power Field-Effect Transistor, 17.3A I(D), 30V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Semicontronic

Mosfet, P Channel, -30V, -35A, Powerpak 1212-8, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:52W Rohs Compliant: Yes |Vishay SI7625DN-T1-GE3.

Newark

MOSFET, P CH, -30V, -35A, POWERPAK 1212; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0088ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-

Farnell