Vishay SI7174DP-T1-GE3

Name: Vishay SI7174DP-T1-GE3
Brand: Vishay
SKU: SI7174DP-T1-GE3

Si7174DP Series N-Channel 75 V 0.007 Ohms SMT Power Mosfet - PowerPAK SO-8

Obsolete

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价格与库存

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Distributor	SKU		Min	Pkg
Newark	SI7174DP-T1-GE3	0	3K	Tape & Reel					1.390
TTI	SI7174DP-T1-GE3	0	3K	Tape & Reel						1h
TTI Asia	SI7174DP-T1-GE3	联系方式							1.610	2h
Avnet	SI7174DP-T1-GE3	0	3K							4d
Farnell	SI7174DP-T1-GE3	1,292	1		4.302*	2.841*	2.300*	1.786*	1.786*	23h

数据表和文档

下载 Vishay SI7174DP-T1-GE3 的数据表和制造商文档。

Newark

Datasheet13 页10 年前

Datasheet13 页11 年前

element14 APAC

Farnell

iiiC

库存历史记录

3 个月趋势:

Restocked

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-04-17

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-02-13

LTD Date2025-08-13

描述

由其分销商提供的 Vishay SI7174DP-T1-GE3 的描述。

Si7174DP Series N-Channel 75 V 0.007 Ohms SMT Power Mosfet - PowerPAK SO-8

Future Electronics

Trans MOSFET N-CH 75V 21A 8-Pin PowerPAK SO EP T/R

Verical

Power Field-Effect Transistor, 21A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Semicontronic

6.25W(Ta),104W(Tc) 20V 4.5V@ 250¦ÌA 72nC@ 10 V 1N 75V 7m¦¸@ 10A,10V 60A 2.77nF@40V SO 4.9mm*5.89mm*1.04mm

UnikeyIC

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:6.25W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; Current Id Max:60A; Junction Temperature Tj Max:150°C; Operating Temperature Range:-55°C to +150°C; Package / Case:PowerPAK; Power Dissipation Pd:104W; Power Dissipation Pd:6.25W; Rise Time:11ns; Termination Type:SMD; Voltage Vds Typ:75V; Voltage Vgs Max:4.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Voltage Vgs th Min:2.5V

element14 APAC