供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-08-14
Lifecycle StatusObsolete (Last Updated: 5 months ago)
描述
由其分销商提供的 Vishay SI5904DC-T1 的描述。
Power Field-Effect Transistor, 3.1A I(D), N-Channel, Metal-oxide Semiconductor FET
MOSFET 2N-CH 20V 3.1A 1206-8
DUAL N-CH 1206-8 CHIPFET 20V 75MOHM @ 4.5V<AZ
Dual MOSFETs 20V 4.2A 2.1W
OBSOLETE - USE SI5904DC-T1-E3
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Number of Pins8
Number of Terminals8
Weight84.99187 mg
Technical
Continuous Drain Current (ID)3.1 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance75 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time35 ns
Gate to Source Voltage (Vgs)12 V
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation1.1 W
Rise Time35 ns
Turn-Off Delay Time19 ns
Turn-On Delay Time12 ns
Dimensions
Height1.1 mm
Length3.05 mm
Width1.65 mm