描述
由其分销商提供的 Vishay SI5445DC-T1-E3 的描述。
Trans MOSFET P-CH 8V 5.2A 8-Pin Chip FET T/R
Small Signal Field-Effect Transistor, 5.2A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
P-Channel MOSFETs 8V 7.1A 2.5W
OBSOLETE - USE SI5445BDC-T1-E3
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-8V; Continuous Drain Current, Id:5.2A; On Resistance, Rds(on):0.035ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:8-1206 ;RoHS Compliant: Yes
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Number of Pins8
Number of Terminals8
Weight84.99187 mg
Technical
Continuous Drain Current (ID)5.2 A
Drain to Source Resistance35 mΩ
Drain to Source Voltage (Vdss)-8 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)8 V
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage8 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.3 W
Rise Time45 ns
Turn-Off Delay Time110 ns
Turn-On Delay Time15 ns