供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-04-06
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2006-07-30
LTD Date2006-10-30
描述
由其分销商提供的 Vishay SI4410DY-REVA 的描述。
Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Channel 30-V (D-S) MOSFET
MOSFETs 30V 10A 2.5W
OBSOLETE - USE SI4410BDY-T1-E3
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageSO
Number of Pins8
Number of Terminals8
Weight84.99187 mg
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time20 ns
Forward Voltage700 mV
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rise Time9 ns
Turn-Off Delay Time70 ns
Turn-On Delay Time19 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm