描述
由其分销商提供的 Vishay SI4401FDY-T1-GE3 的描述。
2.5W(Ta),5W(Tc) 20V 2.3V@ 250¦ÌA 100nC@ 10 V 1P 40V 14.2m¦¸@ 10A,10V 9.9A,14A 4nF@20V SOIC-8
Power MOSFET, P Channel, 40 V, 14 A, 0.0118 ohm, SOIC, Surface Mount
P-Channel 40-V (D-S) Mosfet Rohs Compliant: Yes |Vishay SI4401FDY-T1-GE3
Small Signal Field-Effect Transistor, 14A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Number of Terminals8
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance18.3 mΩ
Drain to Source Voltage (Vdss)-40 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation5 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Schedule B8541290080
Turn-Off Delay Time44 ns
Turn-On Delay Time12 ns
Dimensions
Height1.75 mm