价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | SI3477DV-T1-GE3 | 2,384 | 1 | Cut Tape | ||||||||
| Future Electronics | SI3477DV-T1-GE3 | 6,000 | 3K | Tape & Reel | ||||||||
| DigiKey | SI3477DV-T1-GE3CT-ND | 20,341 | 1 | Cut Tape | ||||||||
| TTI | SI3477DV-T1-GE3 | 3,000 | 3K | Tape & Reel | 1d | |||||||
| TME | SI3477DV-T1-GE3 | 0 | 3K | 11h |
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30V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS
描述
由其分销商提供的 Vishay SI3477DV-T1-GE3 的描述。
SI3477DV-T1-GE3 P-CHANNEL MOSFET TRANSISTOR, 8 A, 12 V, 6-PIN TSOP
Single P-Channel 12 V 0.0175 O Surface Mount Power Mosfet - TSOP-6
Trans MOSFET P-CH 12V 8A 6-Pin TSOP T/R
Transistor Polarity:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:8A; On Resistance Rds(On):0.014Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400Mv Rohs Compliant: No |Vishay SI3477DV-T1-GE3.
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTSOP
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight19.986414 mg
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance17.5 mΩ
Drain to Source Voltage (Vdss)12 V
Fall Time30 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance2.6 nF
Max Operating Temperature150 °C
Max Power Dissipation4.2 W
Min Breakdown Voltage12 V
Min Operating Temperature-55 °C
Nominal Vgs-400 mV
Number of Channels1
Number of Elements1
Power Dissipation2 W
Rds On Max17.5 mΩ
Resistance17.5 mΩ
Rise Time10 ns
Schedule B8541290080
Turn-Off Delay Time65 ns
Turn-On Delay Time10 ns