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Si1403BDL Series P-Channel 20 V 0.15 Ohms Surface Mount Power Mosfet - SOT-363
VishaySI1967DH-T1-GE3
SI1967DH-T1-GE3 DUAL P-CHANNEL MOSFET TRANSISTOR, 1.1 A, 20 V, 6-PIN SOT-363
描述
由其分销商提供的 Vishay SI1403CDL-T1-GE3 的描述。
Si1403CDL Series 20 V 140 mOhm Surface Mount P-Channel MOSFET - SC-70-6
VISHAY - SI1403CDL-T1-GE3 - MOSFET, P-KANAL, 20V, 2.1A, SC-70-6
Trans MOSFET P-CH 20V 1.6A 6-Pin SC-70 T/R
MOSFET, P-CH, 20V, 2.1A, SC-70-3
Small Signal Field-Effect Transistor, 2.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageSOT-363
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight7.512624 mg
Technical
Continuous Drain Current (ID)2.1 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance140 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time18 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance281 pF
Max Operating Temperature150 °C
Max Power Dissipation900 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingDigi-Reel®
Power Dissipation600 mW
Rds On Max140 mΩ
Rise Time26 ns
Threshold Voltage600 mV
Turn-Off Delay Time30 ns
Turn-On Delay Time18 ns
Dimensions
Height900 µm
Length2.05 mm
Width1.25 mm