Vishay IRLI630GPBF

Name: Vishay IRLI630GPBF
Brand: Vishay
SKU: IRLI630GPBF

VISHAY IRLI630GPBF. MOSFET Transistor, N Channel, 5.9 A, 200 V, 400 mohm, 5 V, 1 V

$ 1.155

Obsolete

制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
TME	IRLI630GPBF	0	1		1.420	1.280	1.130	0.950	0.950	17h
element14 APAC	IRLI630GPBF.	0	1		2.254*	1.623*	1.284*	0.906*	0.851*	6h
Farnell	IRLI630GPBF.	0	1		1.228*	1.117*	0.956*	0.919*	0.903*	4h
Mouser	844-IRLI630GPBF	866	1	Tube	3.720	2.410	1.780	1.360	1.310
Microchip USA	IRLI630GPBF	2,128	150	Tube				22.685	22.685	11h

数据表和文档

下载 Vishay IRLI630GPBF 的数据表和制造商文档。

Newark

Datasheet10 页4 年前

Datasheet8 页14 年前

Datasheet8 页9 年前

Datasheet8 页11 年前

element14 APAC

Future Electronics

库存历史记录

3 个月趋势:

+0.00%

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1994-05-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Vishay IRLI630GPBF 的描述。

VISHAY IRLI630GPBF. MOSFET Transistor, N Channel, 5.9 A, 200 V, 400 mohm, 5 V, 1 V

Fly-Wing Technology

Single N-Channel 200 V 0.4 Ohm Flange Mount Power Mosfet - TO-220FP

Future Electronics

Trans MOSFET N-CH 200V 6.2A 3-Pin(3+Tab) TO-220FP

Verical

35W(Tc) 10V 2V@ 250¦ÌA 40nC@ 10 V 1N 200V 400m¦¸@ 3.7A,5V 6.2A 1.1nF@25V TO-220-3

UnikeyIC

Power Field-Effect Transistor, 6.2A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N TO-220FP 200V 5.9A; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.9A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 1V; Power Dis

Farnell