供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-05-01
Lifecycle StatusObsolete (Last Updated: 9 months ago)
LTB Date2024-11-04
LTD Date2025-05-04
描述
由其分销商提供的 Vishay IRL620SPBF 的描述。
Single N-Channel 200 V 0.8 Ohm 50 W Surface Mount Power Mosfet - D2PAK-3
MOSFET, N-CH, 200V, 5.2A, TO-263; Available until stocks are exhausted Alternative available
Trans MOSFET N-CH 200V 5.2A 3-Pin(2+Tab) D2PAK
N CHANNEL MOSFET, 200V, 5.2A D2-PAK; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:5.2A;
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- Vishay Techno
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)5.2 A
Drain to Source Resistance800 mΩ
Drain to Source Voltage (Vds)200 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance360 pF
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation3.1 W
Rds On Max800 mΩ
Rise Time31 ns
Threshold Voltage2 V
Turn-Off Delay Time18 ns
Turn-On Delay Time4.2 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm