供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-07-22
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-06-30
LTD Date2008-09-30
描述
由其分销商提供的 Vishay IRFU420 的描述。
2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs | MOSFET N-CH 500V 2.4A I-PAK
Trans MOSFET N-CH 500V 2.4A 3-Pin (3+Tab) IPAK
Compliant Through Hole 2.39 mm 6.22 mm 6.73 mm 329.988449 mg 16 ns Contains Lead
Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
MOSFET, N I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:500V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-251; No. of Pins:3; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; Package / Case:TO-251 (I-Pak); Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:7.7A; Turn Off Time:16ns; Turn On Time:8.6ns
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight329.988449 mg
Technical
Continuous Drain Current (ID)2.4 A
Current Rating2.4 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance3 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance360 pF
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation42 W
Rds On Max3 Ω
Rise Time8.6 ns
Turn-Off Delay Time33 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)500 V
Dimensions
Height6.22 mm
Length6.73 mm
Width2.39 mm