供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusObsolete (Last Updated: 9 months ago)
描述
由其分销商提供的 Vishay IRFU224PBF 的描述。
Single N-Channel 250 V 1.1 Ohm 42 W Surface Mount Power Mosfet - TO-251-3
IRFU224PBF N-CHANNEL MOSFET TRANSISTOR, 3.8 A, 250 V, 3-PIN TO-251
MOSFET, N I-PAK 250V 3.8A; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.8A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 1.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissi
Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- Vishay Techno
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight329.988449 mg
Technical
Continuous Drain Current (ID)3.8 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance1.1 Ω
Drain to Source Voltage (Vds)250 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance260 pF
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Rds On Max1.1 Ω
Resistance1.1 Ω
Rise Time13 ns
Turn-Off Delay Time20 ns
Turn-On Delay Time7 ns
Dimensions
Height6.22 mm
Length6.73 mm
Width2.38 mm