MOSFET, P, -100V, -3.1A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:-3.1A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:5°C/W; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:12A; SMD Marking:IRFR9110; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:-100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V