供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-07-18
Lifecycle StatusProduction (Last Updated: 7 months ago)
LTB Date2008-06-30
LTD Date2008-09-30
相关零件
STMicroelectronicsSTW24N60DM2
N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-247 package
STMicroelectronicsSTW19NM60N
Automotive-grade N-channel 600 V, 0.26 Ohm, 13 A MDmesh(TM) II Power MOSFET in TO-247 package
描述
由其分销商提供的 Vishay IRFPC40PBF 的描述。
Single N-Channel 600 V 1.2 Ohms Flange Mount Power Mosfet - TO-247AC
Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-247AC
N Channel Mosfet, 600V, 6.8A To-247; Tra |Vishay IRFPC40PBF.
MOSFET, Single - N-Channel, 600V, 4.3A, TO-247
MOSFET, N, 600V, 6.8A, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
Power Field-Effect Transistor, 6.8A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Vishay, Field-effect transistorMosfet
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- Vishay Techno
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)6.8 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation150 W
Rds On Max1.2 Ω
Recovery Time940 ns
Resistance1.2 Ω
Rise Time18 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time55 ns
Turn-On Delay Time13 ns
Dimensions
Height20.7 mm
Length15.87 mm
Width5.31 mm