价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 742-IRFIBF30GPBF-ND | 900 | 1 | Tube | ||||||||
| TME | IRFIBF30GPBF | 0 | 1 | 14h | ||||||||
| TTI | IRFIBF30GPBF | 0 | 1K | Tube | 4h | |||||||
| Newark | IRFIBF30GPBF | 0 | 1K | |||||||||
| RS (Formerly Allied Electronics) | IRFIBF30GPBF | 0 | 1K | Bulk | 14h |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-09-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
描述
由其分销商提供的 Vishay IRFIBF30GPBF 的描述。
Transistor MOSFET N-CH 900V 1.9A 3-Pin (3+Tab) TO-220 Full-Pak
Single N-Channel 900 V 3.7 Ohm 35 W Flange Mount Power Mosfet - TO-220FPAK
35W(Tc) 20V 4V@ 250¦ÌA 78nC@ 10V 1N 900V 3.7¦¸@ 1.1A,10V 1.9A 1.2nF@25V TO-220-3 10.63mm
900V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A TO-220AB PACKAGE
POWER MOSFET Power Field-Effect Transistor, 1.9A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:900V; Continuous Drain Current, Id:1.9A; On Resistance, Rds(on):3.7ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 FULLPAK ;RoHS Compliant: Yes
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)1.9 A
Current Rating1.9 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance3.7 Ω
Drain to Source Voltage (Vdss)900 V
Dual Supply Voltage900 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Isolation Voltage2500 Vrms
Max Operating Temperature150 °C
Max Power Dissipation35 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation35 W
Rds On Max3.7 Ω
Resistance3.7 Ω
Rise Time25 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time90 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)900 V
Dimensions
Height9.8 mm
Length10.63 mm
Width4.83 mm