供应链
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusProduction (Last Updated: 9 months ago)
相关零件
VishayIRFIB5N65APBF
60W(Tc) 30V 4V@250µA 48nC@10V N-Ch MOSFET 650V 930mΩ@3.1A,10V 5.1A 1.417nF@25V TO-220-3 TH
STMicroelectronicsSTP9NK60ZFP
N-Channel 600 V 950 mOhm Flange Mount SuperMESH Power Mosfet - TO-220FP
描述
由其分销商提供的 Vishay IRFIB6N60APBF 的描述。
Single N-Channel 600 V 0.75 Ohms Flange Mount Power Mosfet - TO-220FP
Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) TO-220FP / MOSFET N-CH 600V 5.5A TO220FP
MOSFET, N, 600V, 5.5A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.75ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
POWER MOSFET Power Field-Effect Transistor, 5.5A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- Vishay Techno
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)5.5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance750 mΩ
Drain to Source Voltage (Vds)600 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.4 nF
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation60 W
Rds On Max750 mΩ
Resistance750 mΩ
Rise Time25 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time30 ns
Turn-On Delay Time13 ns
Dimensions
Height9.8 mm
Length10.63 mm
Width4.83 mm