供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-05-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-11-04
LTD Date2025-05-04
描述
由其分销商提供的 Vishay IRFD224PBF 的描述。
Trans MOSFET N-CH 250V 0.63A 4-Pin HVMDIP
Mosfet N-Channel 250V Rohs Compliant: No
Power Field-Effect Transistor, 0.63A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
NCHAN, HEXDIP, 250V IRFD224PBF
MOSFET N, HEXDIP; Transistor Polarity: N Channel; Continuous Drain Current Id: 630mA; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 1.1ohm; Power Dissipation Pd: 1W; Transistor Case Style: DIP; SVHC: No SVHC (20-Jun-20
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageDIP
MountThrough Hole
Number of Pins4
Number of Terminals3
Technical
Continuous Drain Current (ID)630 mA
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance1.1 Ω
Drain to Source Voltage (Vdss)250 V
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance260 pF
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation1 W
Rds On Max1.1 Ω
Rise Time13 ns
Schedule B8541290080
Turn-Off Delay Time20 ns
Turn-On Delay Time7 ns