供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-06-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-11-18
LTD Date2025-05-18
描述
由其分销商提供的 Vishay IRFD020PBF 的描述。
Single N-Channel 50 V 0.1 Ohms Through Hole Power Mosfet - DIP-4
Trans MOSFET N-CH 50V 2.4A 4-Pin HVMDIP T/R
Small Signal Field-Effect Transistor
NCHAN, HEXDIP, 60V, 2.5A IRFD020PBF
MOSFET, N, DIL; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.4A; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold V; Available until stocks are exhausted
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageDIP
MountThrough Hole
Number of Pins4
Number of Terminals3
Technical
Continuous Drain Current (ID)2.4 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)50 V
Element ConfigurationSingle
Fall Time26 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance400 pF
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation1.3 W
Rds On Max100 mΩ
Resistance100 mΩ
Rise Time55 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time16 ns
Turn-On Delay Time8.7 ns