供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1987-11-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2015-11-20
LTD Date2016-05-20
相关零件
描述
由其分销商提供的 Vishay IRF9630 的描述。
P-CHANNEL POWER MOSFETS | MOSFET P-CH 200V 6.5A TO-220AB
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, P TO-220; Transistor Polarity: P Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: -200V; On Resistance Rds(on): 0.8ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 7
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)6.5 A
Drain to Source Resistance800 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time24 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance700 pF
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Rds On Max800 mΩ
Rise Time27 ns
Turn-Off Delay Time28 ns
Turn-On Delay Time12 ns
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm