供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-09-11
Lifecycle StatusProduction (Last Updated: 4 months ago)
描述
由其分销商提供的 Vishay IRF9510PBF 的描述。
Single P-Channel 100 V 1.2 Ohms Flange Mount Power Mosfet - TO-220AB
Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
P Channel Mosfet, -100V, 4A, To-220; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: No |Vishay IRF9510PBF.
MOSFET, P, TO-220; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-100V; Current, Id Cont:3A; Resistance, Rds On:1.2ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:12A; Lead Spacing:2.54mm; No. of Pins:3; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation:20W; Power, Pd:20W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:100V
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)4 A
Current Rating-4 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)-100 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance200 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation43 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation43 W
Rds On Max1.2 Ω
Recovery Time160 ns
Resistance1.2 Ω
Rise Time27 ns
Schedule B8541290080
Threshold Voltage-2 V
Turn-Off Delay Time15 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)-100 V
Dimensions
Height19.89 mm
Length10.41 mm
Width4.7 mm