供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2018-06-13
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-12-31
LTD Date2024-03-30
描述
由其分销商提供的 Transphorm TP65H050WS 的描述。
Power Field-Effect Transistor
GANFET N-CH 650V 34A TO247-3
650 V 34 A CASCODE GAN FET
制造商别名
Transphorm 在全球拥有多个品牌，分销商可将其用作替代名称。Transphorm 也可称为以下名称：
- TRANSPHORM INC
技术规格
Physical
Case/PackageTO-247-3
Technical
Continuous Drain Current (ID)36 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)650 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation119 W
Turn-Off Delay Time86 ns
Turn-On Delay Time51 ns
Dimensions
Height25.59 mm