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描述
由其分销商提供的 Toshiba 2SA1163-BL,LF 的描述。
Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
TRANS PNP 120V 0.1A SMINI / Bipolar (BJT) Transistor PNP 120 V 100 mA 100MHz 150 mW Surface Mount S-Mini
Trans GP BJT PNP 120V 0.1A 150mW 3-Pin S-Mini T/R
300mV@ 1mA,10mA PNP 150mW 5V 100nA 120V 120V 100mA TO-236-3
制造商别名
Toshiba 在全球拥有多个品牌，分销商可将其用作替代名称。Toshiba 也可称为以下名称：
- TOSH
- TOS
- Toshiba Semiconductor and Storage
- TOSHIB
- SMK
- TOSHIBA CORP
- TOSHI
- TSENG
- TOSHIBA CORPORATION
- Toshiba America Electronic Components
- TSH
- Toshiba Memory America Inc
- MARKTECH OPTOELECTRONICS
- TOSHIBA ELECTRONICS
- Toshiba Electronic Devices and Storage Corporation
- Toshiba America
- TOSHIBA ELECTRONIC COMPONENTS
- Toshiba Semiconductor
- Toshiba Lifestyle Products
- Toshiba America Electronic Components Inc
- TOSHIBA-PB FREE
- TOSHIBA SEMI
- TOSHIBAPb
- TOBHIBA
- TOSHBA
技术规格
Physical
Case/PackageTO-236-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)120 V
Collector Emitter Breakdown Voltage120 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)120 V
Emitter Base Voltage (VEBO)5 V
hFE Min350
Max Breakdown Voltage120 V
Max Collector Current100 mA
Max Operating Temperature125 °C
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape (CT)
Power Dissipation150 mW
Schedule B8541210080
Transition Frequency100 MHz