Texas Instruments TLC085CPWP

Name: Texas Instruments TLC085CPWP
Brand: Texas Instruments
SKU: TLC085CPWP

IC OPAMP GP 4 CIRCUIT 20HTSSOP / General Purpose Amplifier 4 Circuit 20-HTSSOP

$ 2.339

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Distributor		SKU		Min	Pkg
Rochester Electronics		TLC085CPWP	29,260				2.430	2.180	2.050	14h
Verical	3	TLC085CPWP	1,260	124				2.725	2.563
Microchip USA		TLC085CPWP	1,456	600	Bulk			2.560	2.560	3d
Win Source		WS-TLC085CPWP	1,000	50			1.052	0.701	0.701	14h
Worldway Electronics		TLC085CPWP	20,151	7	Bulk	0.798	0.773	0.733	0.733	3d

数据表和文档

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Texas Instruments

Technical Drawing2 页1 年前

Official datasheet0 页0 年前

Datasheet52 页11 年前

Datasheet53 页14 年前

Datasheet54 页14 年前

Technical Drawing2 页14 年前

Datasheet50 页18 年前

SHENGYU ELECTRONICS

Newark

DigiKey

库存历史记录

3 个月趋势:

+0.00%

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Lifecycle StatusProduction (Last Updated: 2 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 1 week ago)

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描述

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IC OPAMP GP 4 CIRCUIT 20HTSSOP / General Purpose Amplifier 4 Circuit 20-HTSSOP

Win Source

Quad, 16-V, 10-MHz, In to V- op amp with shutdown functionality 20-HTSSOP 0 to 70

Texas Instruments

Op Amp Quad Wideband Amplifier ±8V/16V 20-Pin HTSSOP EP Tube

Verical

Operational Amplifier (Op-Amp) IC; No. of Amplifiers:4; Op Amp Type:Wideband; Gain Bandwidth -3db:10MHz; Slew Rate:16V/µs; Supply Voltage Min:4.5V; Supply Voltage Max:16V; No. of Pins:20; Operating Temperature Range:0°C to +70°C ;RoHS Compliant: Yes

Newark

The first members of TI's new Bi Mos general-purpose operational amplifier family are the TLC08x. The BiMOSfamily concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher ac and dc performance. With performance rated from 4.5 V to 16V across commercial (0oC to 70oC) and an extended industrial temperature range (-40oC to 125oC), Bi Mos suits a wide range of audio, automotive, industrial, and instrumentation applications. Familiar features like offset nulling pins, and new features like MSOP PowerPAD(TM) packages and shutdown modes, enable higher levels of performance in a variety of applications. Developed in TI's patented LBC3 Bi CMOS process, the new Bi Mos amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both. AC performance improvements over the TL08x BiFET predecessors include abandwidth of 10 MHz (an increase of 300%) and voltage noise of 8.5 nV/\Delta Hz (an improvement of 60%). DC improvements include an ensured VICR that includes ground, a factor of 4 reduction in input offset voltage down to 1.5 mV (maximum) in the standard grade, and a power supply rejection improvement of greater than 40 dB to 130 dB. Added to this list of impressive features is the ability to drive +-50-mA loads comfortably from anultrasmall-footprint MSOP Power Pad package, which positions the TLC08x as the ideal high-performance general-purpose operational amplifier family.